ATLV35 arrays equivalent, ultra low voltage gate arrays.
Specifically Designed for Battery Powered Applications 1.0 - 3.0 Volts and will Operate from 0.7 to 5.5 Volts
* Static Current Drain of <75 nA at 1.0 Volts
* 200 .
1.0 - 3.0 Volts and will Operate from 0.7 to 5.5 Volts
* Static Current Drain of <75 nA at 1.0 Volts
* 200 MHz M.
The ATLV Series CMOS gate arrays employ 1.0 µ-drawn, double-level metal, Si-gate, CMOS technology processed in Atmel's U.S.-based, advanced manufacturing facility. The arrays utilize an enhanced channelless architecture which results in greater than .
Image gallery
TAGS
Download (Size : 88.75KB)